#AI memory

Samsung Samples 12-Layer HBM4E for Next-Generation AI Accelerators

Samsung has shipped samples of a 12-layer HBM4E memory product for next-generation AI accelerators. The reported specifications include up to 16Gbps per pin, 3.6TB/s per stack and a 48GB 12-layer configuration. The company says improved efficiency and thermal characteristics are intended to support AI data-center workloads.